Semiconductor device manufacturing: process – Coating of substrate containing semiconductor region or of... – Insulative material deposited upon semiconductive substrate
Reexamination Certificate
2007-06-26
2007-06-26
Le, Dung A. (Department: 2818)
Semiconductor device manufacturing: process
Coating of substrate containing semiconductor region or of...
Insulative material deposited upon semiconductive substrate
C438S778000, C438S783000
Reexamination Certificate
active
11010529
ABSTRACT:
Dielectric layers containing a lanthanum hafnium oxide layer, where the lanthanum hafnium oxide layer is formed as a structure of one or more monolayers, and methods of fabricating such dielectric layers provide an insulating layer in a variety of structures for use in a wide range of electronic devices.
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Ahn Kie Y.
Forbes Leonard
Le Dung A.
Micro)n Technology, Inc.
Schwegman Lundberg Woessner & Kluth P.A.
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