Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Reexamination Certificate
2006-01-24
2006-01-24
Prenty, Mark V. (Department: 2822)
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
C257S310000
Reexamination Certificate
active
06989573
ABSTRACT:
The invention provides a laminated dielectric layer for semiconductor devices formed by a combination of ZrO2and a lanthanide oxide on a semiconductor substrate and methods of making the same. In certain methods, the ZrO2is deposited by multiple cycles of reaction sequence atomic layer deposition (RS-ALD) that includes depositing a ZrI4precursor onto the surface of the substrate in a first pulse followed by exposure to H2O/H2O2in a second pulse, thereby forming a thin ZrO2layer on the surface. After depositing the ZrO2layer, the lanthanide oxide layer is deposited by electron beam evaporation. The composite laminate zirconium oxide/lanthanide oxide dielectric layer has a relatively high dielectric constant and can be formed in layers of nanometer dimensions. It is useful for a variety of semiconductor applications, particularly for DRAM gate dielectric layers and DRAM capacitors.
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Ahn Kie
Forbes Leonard
Dorsey & Whitney LLP
Micro)n Technology, Inc.
Prenty Mark V.
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