Lanthanide oxide/hafnium oxide dielectrics

Details Lanthanide oxide/hafnium oxide dielectrics Lanthanide oxide/hafnium oxide dielectrics

2006-10-31

2006-10-31

Sarkar, Asok Kumar (Department: 2891)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S310000, C257SE29263, C438S240000

Reexamination Certificate

active

07129553

ABSTRACT:
Dielectric layers containing a chemical vapor deposited hafnium oxide and an electron beam evaporated lanthanide oxide and a method of fabricating such a dielectric layer produce a reliable dielectric layer having an equivalent oxide thickness thinner than attainable using SiO2. Forming a layer of hafnium oxide by chemical vapor deposition and forming a layer of a lanthanide oxide by electron beam evaporation, where the layer of hafnium oxide is adjacent and in contact with the layer of lanthanide, provides a dielectric layer with a relatively high dielectric constant as compared with silicon dioxide. Forming the layer of hafnium oxide by chemical vapor deposition using precursors that do not contain carbon permits the formation of the dielectric layer without carbon contamination. The dielectric can be formed as a nanolaminate of hafnium oxide and a lanthanide oxide.

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