Lanthanide oxide / hafnium oxide dielectric layers

Details Lanthanide oxide / hafnium oxide dielectric layers Lanthanide oxide / hafnium oxide dielectric layers

2007-12-25

2007-12-25

Toledo, Fernando L. (Department: 2823)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S411000, C438S216000, C438S763000, C438S785000

Reexamination Certificate

active

10931343

ABSTRACT:
Dielectric layers containing a hafnium oxide hafnium oxide layer arranged as one or more monolayers and a lanthanide oxide layer and a method of fabricating such a dielectric layer produce a reliable dielectric layer having an equivalent oxide thickness thinner than attainable using SiO2. The dielectric can be formed as a nanolaminate of hafnium oxide and a lanthanide oxide.

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