Lanthanide doped TiOx dielectric films by plasma oxidation

Semiconductor device manufacturing: process – Coating of substrate containing semiconductor region or of... – Insulative material deposited upon semiconductive substrate

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C257SE21675

Reexamination Certificate

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07439194

ABSTRACT:
A dielectric film containing lanthanide doped TiOxand a method of fabricating such a dielectric film produce a reliable gate dielectric having an equivalent oxide thickness thinner than attainable using SiO2. A dielectric film is formed by evaporation of Ti, a lanthanide, and oxidation of the evaporated Ti/lanthanide film using an oxygen plasma.

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