Lanthanide doped TiO x dielectric films by plasma oxidation

Details Lanthanide doped TiO x dielectric films by plasma oxidation Lanthanide doped TiO x dielectric films by plasma oxidation

2006-04-11

2006-04-11

Flynn, Nathan J. (Department: 2826)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S288000, C438S216000, C438S261000

Reexamination Certificate

active

07026694

ABSTRACT:
A dielectric film containing lanthanide doped TiOxand a method of fabricating such a dielectric film produce a reliable gate dielectric having an equivalent oxide thickness thinner than attainable using SiO2. A dielectric film is formed by ion assisted electron beam evaporation of Ti, electron beam evaporation of a lanthanide selected from a group consisting of Nd, Tb, and Dy, and oxidation of the evaporated Ti/lanthanide film in a Kr/oxygen plasma. The growth rate is controlled to provide a dielectric film having a lanthanide content ranging from about five to about forty percent of the dielectric film. These dielectric films containing lanthanide doped TiOxare amorphous and thermodynamically stable such that the lanthanide doped TiOxwill have minimal reactions with a silicon substrate or other structures during processing.

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