L-shaped spacer incorporating or patterned using amorphous...

Details L-shaped spacer incorporating or patterned using amorphous... L-shaped spacer incorporating or patterned using amorphous...

2005-05-17

2005-05-17

Wojciechowicz, Edward (Department: 2815)

Semiconductor device manufacturing: process

Chemical etching

Combined with the removal of material by nonchemical means

C438S692000, C438S694000, C257S333000, C257S401000

Reexamination Certificate

active

06893967

ABSTRACT:
A multilayer L-shaped spacer is formed of a lower portion comprising a CVD organic material or amorphous carbon, and an upper portion comprised of a protective material. The upper portion is patterned using a photoresist mask. During that patterning, the underlying substrate is protected by a layer of CVD organic material or amorphous carbon. The CVD organic material or amorphous carbon is then patterned using the patterned protective material as a mask. The chemistry used to pattern the CVD organic material or amorphous carbon is relatively harmless to the underlying substrate. Alternatively, an L-shaped spacer is patterned without using a photoresist mask by forming an amorphous carbon spacer around a gate that is covered with a conformal layer of a conventional spacer material. The conventional spacer material is patterned using the amorphous carbon spacer as an etch mask. The amorphous carbon spacer is easily formed without the need for lithographic patterning, and therefore this method is preferable to methods using photoresist masks.

REFERENCES:
patent: 20020179982 (2002-12-01), Cheng et al.
patent: 20040072435 (2004-04-01), Quek

Affiliated with

Also associated with

Rating

L-shaped spacer incorporating or patterned using amorphous... does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with L-shaped spacer incorporating or patterned using amorphous..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and L-shaped spacer incorporating or patterned using amorphous... will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-3382471