Key-hole reduction during tungsten plug formation

Details Key-hole reduction during tungsten plug formation Key-hole reduction during tungsten plug formation

1999-01-11

2000-08-01

Utech, Benjamin L.

Semiconductor device manufacturing: process

Chemical etching

Combined with the removal of material by nonchemical means

438700, 438701, 438710, H01L 21302

Patent

active

060966513

ABSTRACT:
The problem of key-hole formation during the filling of small diameter via holes has been overcome by means of soft sputtering in argon after the barrier layer is in place. This sputtering step may be used twice--once to widen the mouth of a newly formed via hole, and a second time after the barrier layer is in place, thereby widening the mouth further (as well as removing oxide from the surface of the barrier layer). In an alternate optional embodiment, widening of the via hole mouth may be limited to a single sputtering step after the barrier layer has been laid down. In either case, this is followed by filling of the via hole which occurs without any key-hole formation.

REFERENCES:
patent: 4903117 (1990-02-01), Okamoto et al.
patent: 4956313 (1990-09-01), Cote et al.
patent: 5313100 (1994-05-01), Ishii et al.
patent: 5488014 (1996-01-01), Harada et al.
patent: 5521119 (1996-05-01), Chen et al.
patent: 5658829 (1997-08-01), Mathews et al.
patent: 5888901 (1999-03-01), Grivna

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