Semiconductor device manufacturing: process – Chemical etching
Patent
1999-05-19
2000-08-01
Utech, Benjamin L.
Semiconductor device manufacturing: process
Chemical etching
216 99, 216109, 134 13, 134 3, H01L 21302, C23F 100
Patent
active
060966505
ABSTRACT:
A surface having an exposed silicon/silica interface is cleaned by an HF dip, followed immediately by a rinse in citric acid, followed by a rinse in deionized water. Low pH of the citric acid significantly prevents the formation of a charge differential between the silica and silicon portions of the surface, which charge differential would otherwise cause any silica particles present to remain on the silicon portion of the surface. Surfactant properties of the citric acid help remove any silica particles from the surface. The deionized water rinse then removes the citric acid from the surfaces, leaving a very clean, low particulate surface on both the silica and silicon portions thereof, with little or no etching of the silicon portion.
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Robinson Karl M.
Walker Michael A.
Chen Kin-Chan
Micro)n Technology, Inc.
Utech Benjamin L.
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