Semiconductor device manufacturing: process – Coating with electrically or thermally conductive material – To form ohmic contact to semiconductive material
Reexamination Certificate
2011-04-12
2011-04-12
Estrada, Michelle (Department: 2823)
Semiconductor device manufacturing: process
Coating with electrically or thermally conductive material
To form ohmic contact to semiconductive material
C438S603000, C438S604000, C438S657000, C257SE21135, C257SE21466
Reexamination Certificate
active
07923368
ABSTRACT:
A method of forming a diffusion region is disclosed. The method includes depositing a nanoparticle ink on a surface of a wafer to form a non-densified thin film, the nanoparticle ink having set of nanoparticles, wherein at least some nanoparticles of the set of nanoparticles include dopant atoms therein. The method also includes heating the non-densified thin film to a first temperature and for a first time period to remove a solvent from the deposited nanoparticle ink; and heating the non-densified thin film to a second temperature and for a second time period to form a densified thin film, wherein at least some of the dopant atoms diffuse into the wafer to form the diffusion region.
REFERENCES:
patent: 5720827 (1998-02-01), Simmons
patent: 5766971 (1998-06-01), Ahlgren et al.
patent: 6126740 (2000-10-01), Schulz et al.
patent: 6239355 (2001-05-01), Salafsky
patent: 6268014 (2001-07-01), Eberspacher et al.
patent: 6277766 (2001-08-01), Ayers
patent: 6358613 (2002-03-01), Buriak
patent: 6485986 (2002-11-01), Buriak et al.
patent: 6569979 (2003-05-01), Strother et al.
patent: 6677163 (2004-01-01), Boukherroub et al.
patent: 6710366 (2004-03-01), Lee et al.
patent: 6846681 (2005-01-01), Buriak et al.
patent: 6869864 (2005-03-01), Yim et al.
patent: 6878871 (2005-04-01), Scher et al.
patent: 6897471 (2005-05-01), Soref et al.
patent: 6943054 (2005-09-01), Bocian et al.
patent: 6986818 (2006-01-01), Tillotson et al.
patent: 2002/0098653 (2002-07-01), Flagan et al.
patent: 2004/0095658 (2004-05-01), Buretea et al.
patent: 2004/0166306 (2004-08-01), Black et al.
patent: 2004/0229447 (2004-11-01), Swihart et al.
patent: 2004/0266148 (2004-12-01), Yim et al.
patent: 2005/0008880 (2005-01-01), Kunze et al.
patent: 2005/0012095 (2005-01-01), Niira et al.
patent: 2005/0078158 (2005-04-01), Magdassi et al.
patent: 2005/0107478 (2005-05-01), Klimov et al.
patent: 2005/0126628 (2005-06-01), Scher et al.
patent: 2005/0150541 (2005-07-01), Scher et al.
patent: 2005/0183766 (2005-08-01), Nakajima et al.
patent: 2005/0214967 (2005-09-01), Scher et al.
patent: 2006/0060862 (2006-03-01), Bawendi et al.
patent: 2006/0094189 (2006-05-01), Zurcher et al.
patent: 2006/0108688 (2006-05-01), Richardson et al.
patent: 2006/0284171 (2006-12-01), Levy et al.
patent: 2006/0292836 (2006-12-01), Peng
patent: 2007/0006914 (2007-01-01), Lee
patent: 2008/0138966 (2008-06-01), Rogojina et al.
patent: 2008/0160265 (2008-07-01), Hieslmair et al.
patent: 2008/0160733 (2008-07-01), Hieslmair et al.
patent: 2008/0230782 (2008-09-01), Antoniadis et al.
patent: 2009/0053878 (2009-02-01), Kelman et al.
patent: 103 26 538 (2005-01-01), None
patent: 0654831 (1995-05-01), None
patent: 2002-299274 (2002-10-01), None
patent: 2003 188393 (2003-07-01), None
patent: 2003-218048 (2003-07-01), None
patent: 2004-071716 (2004-03-01), None
patent: 2004 221149 (2004-08-01), None
patent: 2005-217046 (2005-08-01), None
patent: 2005332913 (2005-12-01), None
patent: WO 99/21934 (1999-05-01), None
patent: WO 01/37324 (2001-05-01), None
patent: WO 02/084708 (2002-10-01), None
patent: WO 2004/023527 (2004-03-01), None
patent: WO 2004/068536 (2004-08-01), None
patent: WO 2004/093202 (2004-10-01), None
patent: WO 2005/075048 (2005-08-01), None
patent: WO 2006/034025 (2006-03-01), None
patent: WO 2006/063893 (2006-06-01), None
patent: WO 2006/076610 (2006-07-01), None
patent: WO 2008/039757 (2008-04-01), None
International Search Report and Written Opinion for PCT/US2009/040069 mailed Jan. 5, 2010.
International Search Report and Written Opinion for PCT/US2008/061611 dated Jan. 21, 2009.
Goldstein, A. N., “The melting of silicon nanocrystal: Submicron thin-film structures derived from nanocrystal precursors,”Applied Physics A: Materials Science&Processing, Springer International, DE, vol. 62, Jan. 1996, pp. 33-37.
Miyake, M., “Shallow Boron-Doped Layer Formation by Boron Diffusion from Poly-Si Through Thin SiO2,”Journal of the Electrochemical Society, Hooksett, New Hampshire, vol. 141, No. 6, Jun. 1994, pp. 1702-1708.
Pfiester, J. R. et al., “An Ultra-Shallow Buried-Channel PMOST Using Boron Penetration,” IEEETransactions on Electron Devices, IEEE Service Center, Pisacataway, New Jersey, vol. 40, No. 1, Jan. 1993, pp. 207-212.
Garcia-Serrano, J. et al., “Formation and vibrational structure of Si nano-clusters in ZnO matrix,”Revista Mexicana De Fisica, 47(1), Feb. 2001, pp. 26-29.
Ray, S. K. et al., “Luminescence characteristics of Ge nanocrystals embedded in SiO2matrix,”Optical Materials, 27, Feb. 2005, pp. 948-952; published by Elsevier B.V.
Ando, M. et al., “Transient photocurrent of (silicon nanocrystals)-(organic polysilane) composites—detection of surface states of silicon nanocrystals,”Thin Solid Films, 499 (1-2), Mar. 2006, pp. 119-122; published by Elsevier B.V.
Martucci, A. et al., “Microstructural and nonlinear optical properties of silica-titania sol-gel film doped with PbS quantum dots,”J. Applied Physics, 86 (1), Jul. 1999, pp. 79-87; published by American Institute of Physics.
Guglielmi, M. et al., “Control of Semiconductor Particle Size in Sol-Gel Thin Films,”Journal of Sol-Gel Sciences and Technology, 8, 1997, pp. 1017-1021; published by Kluwer Academic Publishers, The Netherlands.
Buriak, J. M., “Organometallic chemistry on Silicon and Germanium Surfaces,”Chemical Reviews, 102 (5) (May 2002), pp. 1271-1308; published by American Chemical Society.
Lau, H. W. et al., “Defect-induced photoluminescence from tetraethylorthosilicate thin films containing mechanically milled silicon nanocrystals,”J. Applied Physics, 97 (10) (May 2005), pp. 104307-1-104307-4; published by American Institute of Physics.
Dias, M. L. et al., “Core shell silica-silicon hybrid nanoparticles: synthesis and characterization,”J. Metastable and Nanocrystalline Materials, 22 (2004), pp. 83-90; published by Trans Tech Publications, Switzerland.
International Search Report for PCT/US2007/067126, mailed Dec. 5, 2007.
International Search Report for PCT/US2007/073037, mailed Nov. 15, 2007.
Dang, Y. X. et al., “Study of the Interdiffusion Effect on the Band Structures of Si1−xGex/Si Quantum Wells,”Journal of Applied Physics, vol. 99, No. 7, Apr. 10, 2006, pp. 076108-1-076108-3; published by American Institute of Physics.
Lenhart, J. L. et al., “Characterization of sizing layers and buried polymer/sizing/substrate interfacial regions using a localized fluorescent probe,”Journal of Colloid and Interface Science, vol. 257 (2003), pp. 398-407; published by Elsevier Science (USA).
Li-Wei Tu et al., “Observation of quantum size effect in the resistivity of thin, gray tin epilayers”,Appl. Phys. Lett., vol. 55, No. 13, Sep. 25, 1989, pp. 1327-1329; published by American Institute of Physics.
Miesner, C. et al., “Intra-Valence Band Photocurrent Measurements on Ge Quantum Dots in Si,”Thin Solid Films, vol. 380, No. 1-2, Dec. 22, 2000, pp. 180-182; published by Elsevier Science B.V.
Samey, W. L. et al., “Microstructural Characterization of Quantum Dots with Type-II Band Alignments,”Solid-State Electronics, vol. 50, No. 6, Jun. 2006, pp. 1124-1127; published by Elsevier Ltd.
Nozik, A. J., “Advanced Concepts for Photovoltaic Cells,” Presented at the National Center for Photovoltaics and Solar Program Review Meeting: Denver, Colorado, Mar. 24-26, 2003, pp. 1-5.
Ellingson et al. “Highly Efficient Multiple Exciton Generation in Colloidal PbSe and PbS Quantum Dots,”Nano Letters, vol. 5, No. 5, (2005) pp. 865-871; published by American Chemical Society.
Ellingson et al. “Nanocrystals Generating >1 Electron Per Photon May Lead to Increased Solar Cell Efficiency,” Printed from website on Sep. 11, 2006: http:/
ewsroom.spie.org/x3923.xml?ss=print.
Shang Yuan Ren, “Quantum Confinement in Semiconductor Ge Quantum Dots,”Solid State Communications, vol. 102, No. 6 (1997) pp. 479-484; publish
Antoniadis Homer
Kelman Maxim
Poplavskyy Dmitry
Terry Mason
Estrada Michelle
Foley & Lardner LLP
Innovalight, Inc.
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