Junction electronic component and an integrated power device...

Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode

Reexamination Certificate

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C257S342000, C257S365000

Reexamination Certificate

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07091559

ABSTRACT:
A junction device including at least a first type semiconductor region and a second type semiconductor region a, which are arranged contiguous to one another and have a first and, respectively, a second type of conductivity, which are opposite to one another, and a first and a second biasing region (; the device is moreover provided with a resistive region, which has the first type of conductivity and extends from the first type semiconductor region and is contiguous to the second type semiconductor region so as to form a resistive path between the first and the second biasing regions.

REFERENCES:
patent: 3171042 (1965-02-01), Matare
patent: 6268628 (2001-07-01), Yoshida et al.
patent: 1028511 (2000-08-01), None
patent: 1189286 (2002-03-01), None
patent: 62199051 (1987-09-01), None
patent: 63050070 (1988-03-01), None
patent: 2002246598 (2002-08-01), None
European Search Report, 03425242.9, Oct. 27, 2003.

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