Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Reexamination Certificate
2006-08-15
2006-08-15
Wojciechowicz, Edward (Department: 2815)
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
C257S342000, C257S365000
Reexamination Certificate
active
07091559
ABSTRACT:
A junction device including at least a first type semiconductor region and a second type semiconductor region a, which are arranged contiguous to one another and have a first and, respectively, a second type of conductivity, which are opposite to one another, and a first and a second biasing region (; the device is moreover provided with a resistive region, which has the first type of conductivity and extends from the first type semiconductor region and is contiguous to the second type semiconductor region so as to form a resistive path between the first and the second biasing regions.
REFERENCES:
patent: 3171042 (1965-02-01), Matare
patent: 6268628 (2001-07-01), Yoshida et al.
patent: 1028511 (2000-08-01), None
patent: 1189286 (2002-03-01), None
patent: 62199051 (1987-09-01), None
patent: 63050070 (1988-03-01), None
patent: 2002246598 (2002-08-01), None
European Search Report, 03425242.9, Oct. 27, 2003.
Alessandria Antonino
Fragapane Leonardo
Graybeal Jackson Haley
Jorgenson Lisa K.
Rusyn Paul F.
STMicroelectronics S.r.l.
Wojciechowicz Edward
LandOfFree
Junction electronic component and an integrated power device... does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Junction electronic component and an integrated power device..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Junction electronic component and an integrated power device... will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-3704470