Junction diode comprising varying semiconductor compositions

Details Junction diode comprising varying semiconductor compositions Junction diode comprising varying semiconductor compositions

2007-05-29

2007-05-29

Picardat, Kevin M. (Department: 2822)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S208000, C438S128000

Reexamination Certificate

active

10954577

ABSTRACT:
The invention provides for a junction diode including a heavily doped first region having a first conductivity type, a second lightly doped or intrinsic region having a second conductivity type, and a third heavily doped region having a second conductivity type. The junction diode comprises more than one semiconductor or semiconductor alloy. In preferred embodiments, the lightly doped or intrinsic region has a higher proportion of germanium than on or the other or both of the heavily doped regions. In preferred embodiments, the junction diode is vertically oriented, and the top region has a higher proportion of silicon than the other regions.

REFERENCES:
patent: 6879014 (2005-04-01), Wagner et al.
patent: 6951780 (2005-10-01), Herner
patent: 2003/0164491 (2003-09-01), Lee
Bang, David.S. ,et al. ,“Resistivity of boron and phosphorus doped polycrystalline Si1-xGex films”,Appl. Phys. Lett. 66(2) Jan. 9, 1995, 195-197.
King, Tsu-Jae.,et al. ,“Polycrystalline Silicon-Germanium Thin-Film Transistors”,IEEE Transactions on Electron Devices, vol. 41, No. 9, Sep. 1994, 1581-1591.

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