Semiconductor device manufacturing: process – Coating with electrically or thermally conductive material – To form ohmic contact to semiconductive material
Patent
1998-06-26
2000-07-25
Bueker, Richard
Semiconductor device manufacturing: process
Coating with electrically or thermally conductive material
To form ohmic contact to semiconductive material
206710, 206832, 414935, H01L 2144
Patent
active
060936444
ABSTRACT:
The invention is aimed at reducing the influence of the pollution from impurities in the wafer to improve the wafer yield on the basis of prevention of the pollution from impurities while occurrence of slip lines in the wafer is minimized to enhance the efficiency of the surface treatment of the wafer loading faces of the vertical wafer board. For example, the surface of the jig for semiconductor wafers which is composed of the substrate of a high purity carbon is formed with a SiC film by the CVD method, said surface being ground by a grinding tool again formed of a SiC film. Hangover particles produced by said grinding operation are subjected to a high temperature oxydizing treatment to be dissolved thereafter. Application of this method to the vertical wafer board realizes that when n times of measurements are conducted for a length of Lmm in the range of L.times.n.gtoreq.100 mm to obtain a result that said SiC film has a maximum surface roughness Rmax. which is maintained constantly below 10 .mu.m or less in n times of measurements while the number of particles having a size of 0.1 .mu.m or more and adhering to the surface is reduced down to 10 pieces/mm.sup.2 or less. As a result, the support by an extensive plane of the wafer loading face is assured and the influence of pollution from impurities are removed and the occurrence of slip lines is minimized.
REFERENCES:
patent: 4582561 (1986-04-01), Ioku et al.
patent: 5200157 (1993-04-01), Toya et al.
patent: 5820686 (1998-10-01), Moore
"SUSCEPTOR"; Patent Abstracts of Japan; 02212394; Aug. 23, 1990.
"PRODUCTION OF HEAT-EXCHANGER MADE OF SINTERED SILICON CARBIDE"; Patent Abstracts of Japan; 01018974; Jan. 23, 1989.
Inaba Takeshi
Kitazawa Atsuo
Bueker Richard
Toshiba Ceramics Co. Ltd.
Zervigon Rudy
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