Isotropic nitride stripping

Details Isotropic nitride stripping Isotropic nitride stripping

1994-04-29

1998-04-21

Nguyen, Nam

Adhesive bonding and miscellaneous chemical manufacture

Delaminating processes adapted for specified product

Delaminating in preparation for post processing recycling step

1566461, 1566621, 437225, H01L 2100

Patent

active

057413967

ABSTRACT:
A dry etch process for stripping LOCOS nitride masks (302) with fluorine based removal of oxynitride (312) followed by fluorine plus chlorine based removal of nitride (302) and any silicon buffer layer (303) without removal of pad oxide (304).

REFERENCES:
patent: 4568410 (1986-02-01), Thornquist
patent: 4789426 (1988-12-01), Pipkin
patent: 5387312 (1995-02-01), Keller et al.
"Highly Selective Etching of Silicon Nitride Over Silicon Dioxide Employing a Down Stream Type Reactor"; Solid State Technology; (1988'); 31(4); 127-130; Hayasaka et al.
"Highly Selective Etching of Silicon Nitride (Si.sub.3 N.sub.4) to Silicon Dioxide Employing Fluorine And Chlorine Atoms Generated By Microwave"; Suto et al.; J. Electrochem. Soc. (1989'); 136(7); pp. 2032-2034.

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