Adhesive bonding and miscellaneous chemical manufacture – Delaminating processes adapted for specified product – Delaminating in preparation for post processing recycling step
Patent
1988-03-25
1990-07-10
Lacey, David L.
Adhesive bonding and miscellaneous chemical manufacture
Delaminating processes adapted for specified product
Delaminating in preparation for post processing recycling step
156656, 156657, 252 791, 252 792, C03C 1500, C23F 102, C09K 1300
Patent
active
049405098
ABSTRACT:
A capped silicide process which prevents reactions between the siliciding metal and oxygen contaminants and prevents silicon outdiffusion. In one form the process entails formation of a cap layer over the metal layer prior to performing the silicide reaction and subsequent removal of the cap layer with an isotropic etchant that does not degrade the underlying silicide.
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Ghandhi, VLSI Fabrication Principles, John Wiley & Sons, 1983, pp. 420-439.
Park et al, J. Vac. Sci. Technol., A2(2), Apr.-Jun. 1984, pp. 259-263.
Tseng et al, IEEE Electron Device Letters, vol. EDL-7, No. 11, Nov. 1986, pp. 623-624.
Lin et al, J. Electrochemical Soc., vol. 133, No. 11, Nov. 1986, pp. 2386-2389.
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PUB. No. 15A110-05/84 "The Accubath .TM.Nitride-Etch. The Only True Refluxing Phosphoric Etcher".
Tseng et al.: A New Oxidation-Resistant Self-Aligned TiSi.sub.2 Process, IEEE Electron Device Letters, vol. EDL-7, No. 11, Nov. 1986.
Park et al.: MO/Ti bilayer metallization for a self-aligned TiSi.sub.2 Process, J. Vac. Sci. Technol. A2(2), Apr.-Jun. 1984.
Lin et al.: An Environment-Insensitive Trilayer Structure for Titanium Silicide Formation. J. Electrochem. Soc.: Solid State Science, and Tech., vol. 133, No. 11, Nov. 1986.
Bouldin David L.
Calley Mark R.
Tipton Charlotte M.
Tso Stephen T.
Anderson Rodney M.
Dang Thi
Lacey David L.
Sharp Melvin
Sorensen Douglas A.
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