Isotropic etchant for capped silicide processes

Details Isotropic etchant for capped silicide processes Isotropic etchant for capped silicide processes

1988-03-25

1990-07-10

Lacey, David L.

Adhesive bonding and miscellaneous chemical manufacture

Delaminating processes adapted for specified product

Delaminating in preparation for post processing recycling step

156656, 156657, 252 791, 252 792, C03C 1500, C23F 102, C09K 1300

Patent

active

049405098

ABSTRACT:
A capped silicide process which prevents reactions between the siliciding metal and oxygen contaminants and prevents silicon outdiffusion. In one form the process entails formation of a cap layer over the metal layer prior to performing the silicide reaction and subsequent removal of the cap layer with an isotropic etchant that does not degrade the underlying silicide.

REFERENCES:
patent: 4551908 (1985-11-01), Nagasawa et al.
patent: 4690730 (1987-09-01), Tang et al.
Ghandhi, VLSI Fabrication Principles, John Wiley & Sons, 1983, pp. 420-439.
Park et al, J. Vac. Sci. Technol., A2(2), Apr.-Jun. 1984, pp. 259-263.
Tseng et al, IEEE Electron Device Letters, vol. EDL-7, No. 11, Nov. 1986, pp. 623-624.
Lin et al, J. Electrochemical Soc., vol. 133, No. 11, Nov. 1986, pp. 2386-2389.
W. van Gelder et al., "The Etching of Silicon Nitride in Phosphoric Acid with Silicon Dioxide as a Mask" J. Electrochem Soc.: Solid State Science vol. 114, No. 8, p. 869, Aug. 1967.
PUB. No. 15A110-05/84 "The Accubath .TM.Nitride-Etch. The Only True Refluxing Phosphoric Etcher".
Tseng et al.: A New Oxidation-Resistant Self-Aligned TiSi.sub.2 Process, IEEE Electron Device Letters, vol. EDL-7, No. 11, Nov. 1986.
Park et al.: MO/Ti bilayer metallization for a self-aligned TiSi.sub.2 Process, J. Vac. Sci. Technol. A2(2), Apr.-Jun. 1984.
Lin et al.: An Environment-Insensitive Trilayer Structure for Titanium Silicide Formation. J. Electrochem. Soc.: Solid State Science, and Tech., vol. 133, No. 11, Nov. 1986.

Affiliated with

Also associated with

Rating

Isotropic etchant for capped silicide processes does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Isotropic etchant for capped silicide processes, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Isotropic etchant for capped silicide processes will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-1719476