Semiconductor device manufacturing: process – Introduction of conductivity modifying dopant into... – Ion implantation of dopant into semiconductor region
Reexamination Certificate
2009-05-12
2011-10-11
Nguyen, Ha Tran T (Department: 2829)
Semiconductor device manufacturing: process
Introduction of conductivity modifying dopant into...
Ion implantation of dopant into semiconductor region
C257S368000
Reexamination Certificate
active
08034699
ABSTRACT:
A method implants impurities into well regions of transistors. The method prepares a first mask over a substrate and performs a first shallow well implant through the first mask to implant first-type impurities to a first depth of the substrate. The first mask is removed and a second mask is prepared over the substrate. The method performs a second shallow well implant through the second mask to implant second-type impurities to the first depth of the substrate and then removes the second mask. A third mask is prepared over the substrate. The third mask has openings smaller than openings in the first mask and the second mask. A first deep well implant is performed through the third mask to implant the first-type impurities to a second depth of the substrate, the second depth of the substrate being greater than the first depth of the substrate. The third mask is removed and a fourth mask is prepared over the substrate, the fourth mask has openings smaller than the openings in the first mask and the second mask. Then, a second deep well implant is performed through the fourth mask to implant the second-type impurities to the second depth of the substrate.
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Adkisson James W.
Bryant Andres
Jaffe Mark D.
Loiseau Alain
Campbell Shaun
Gibb I.P. Law Firm LLC
International Business Machines - Corporation
Kotulak, Esq. Richard M.
Nguyen Ha Tran T
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