Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – Having insulated gate
Reexamination Certificate
2007-10-16
2010-12-07
Nguyen, Ha Tran T (Department: 2829)
Semiconductor device manufacturing: process
Making field effect device having pair of active regions...
Having insulated gate
C438S234000, C438S294000, C438S296000, C438S700000, C257SE21540, C257SE21642, C257SE21696
Reexamination Certificate
active
07846789
ABSTRACT:
A semiconductor device comprising a first transistor device on or in a semiconductor substrate and a second transistor device on or in the substrate. The device further comprises an insulating trench located between the first transistor device and the second transistor device. At least one upper corner of the insulating trench is a rounded corner in a lateral plane of the substrate.
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Hower Philip L.
Lin John
Merchant Steven L.
Pendharkar Sameer P.
Brady III Wade J.
Franz Warren L.
Nguyen Ha Tran T
Telecky , Jr. Frederick J.
Texas Instruments Incorporated
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