Active solid-state devices (e.g. – transistors – solid-state diode – Integrated circuit structure with electrically isolated... – Including high voltage or high power devices isolated from...
Reexamination Certificate
2005-04-05
2005-04-05
Thomas, Tom (Department: 2815)
Active solid-state devices (e.g., transistors, solid-state diode
Integrated circuit structure with electrically isolated...
Including high voltage or high power devices isolated from...
C257S369000, C257S374000, C257S499000, C257S401000, C257S506000
Reexamination Certificate
active
06876053
ABSTRACT:
An apparatus and methods for modifying isolation structure configurations for MOS devices to either induce or reduce tensile and/or compressive stresses on an active area of the MOS devices. The isolation structure configurations according to the present invention include the use of low-modulus and high-modulus, dielectric materials, as well as, tensile stress-inducing and compressive stress-inducing, dielectric materials, and further includes altering the depth of the isolation structure and methods for modifying isolation structure configurations, such as trench depth and isolation materials used, to modify (i.e., to either induce or reduce) tensile and/or compressive stresses on an active area of a semiconductor device.
REFERENCES:
patent: 5395790 (1995-03-01), Lur
patent: 5923073 (1999-07-01), Aoki et al.
patent: 6083797 (2000-07-01), Wong et al.
patent: 6091129 (2000-07-01), Cleeves
patent: 6144076 (2000-11-01), Puchner et al.
patent: 6175138 (2001-01-01), Noda
patent: 6455912 (2002-09-01), Kim et al.
Hamada et al., “A New Aspect of Mechanical Stress Effects in Scaled MOS Devices,” IEEE Transactions on Electron Devices, vol. 38, No. 4, Apr. 1991, pp. 895-900.
Dai Changhong
Eiles Travis
Fujimoto Harry
Lee Jin
Lee Shiuh-Wuu
Fenty Jesse A.
Thomas Tom
Winkle Robert G.
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