Isolation scheme based on recessed locos using a sloped Si etch

Details Isolation scheme based on recessed locos using a sloped Si etch Isolation scheme based on recessed locos using a sloped Si etch

1997-09-29

2000-03-07

Hiteshew, Felisa

Semiconductor device manufacturing: process

Chemical etching

Vapor phase etching

438717, H01L 21302

Patent

active

060339918

ABSTRACT:
A method of forming a field oxide or an isolation region in a semiconductor die. An oxidation mask layer (over an oxide layer disposed over the substrate) is patterned and subsequently etched, preferably so that the oxidation mask layer may have a nearly vertical sidewall. The oxide layer and the substrate in the isolation region are etched to form a recess in the substrate having a sloped surface with respect to the sidewall of the oxidation mask layer. A field oxide is then grown in the recess using a dry oxidizing atmosphere. The sloped sidewall of the substrate recess effectively moves the face of the exposed substrate away from the edge of the oxidation mask layer sidewall. Compared to non-sloped techniques, the oxidation appears to start with a built-in offset from the patterned etch. This leads to a reduction of oxide encroachment and less field oxide thinning. The preferred range of slopes for the substrate sidewall is from approximately 10.degree. to 40.degree. with respect to the oxidation mask layer sidewall.

REFERENCES:
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patent: 5393694 (1995-02-01), Matthews
patent: 5429714 (1995-07-01), Tuan et al.
patent: 5658822 (1997-08-01), Wu et al.
patent: 5672539 (1997-09-01), Thakur et al.

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