Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Patent
1998-02-13
2000-03-21
Clark, Sheila V.
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
257622, 257627, 257374, 257396, 257397, 257510, 257513, 257521, 257527, H01L 29788
Patent
active
06040597&
ABSTRACT:
A wet etching process for establishing isolation grooves in a flash memory core wafer includes depositing nitride and/or oxide layers on a silicon substrate of the wafer, depositing a photoresist layer thereon, and then exposing predetermined portions of the photoresist layer to ultraviolet light to establish a desired groove pattern in the photoresist layer. A dry etching process is then used to remove the nitride and/or oxide layers beneath the groove pattern of the photoresist layer to thereby expose portions of the substrate. Next, the wafer is disposed in a wet etching solution such as potassium hydroxide to form grooves in the exposed portions of the silicon substrate. The wafer is oriented and disposed in the bath as appropriate for forming V-shaped grooves, such that after etching, the angled walls of the grooves can be easily exposed to a dopant beam directly above the wafer, without having to tilt the wafer or beam source. Thereby, the walls of the grooves are easily implanted with dopant.
REFERENCES:
patent: 3765969 (1973-10-01), Kragness et al.
patent: 4172005 (1979-10-01), Muraoka et al.
patent: 4507849 (1985-04-01), Shinozaki
patent: 4581814 (1986-04-01), Celler et al.
patent: 4624047 (1986-11-01), Tani
patent: 5010556 (1991-04-01), Imanaka et al.
patent: 5328559 (1994-07-01), Jerman
patent: 5683075 (1997-11-01), Gaul et al.
patent: 5721700 (1998-02-01), Katoh
patent: 5786262 (1998-07-01), Jang et al.
Kim Unsoon
Liu Yowjuang W.
Sun Yu
Advanced Micro Devices , Inc.
Clark Sheila V.
Tran H. D.
LandOfFree
Isolation boundaries in flash memory cores does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Isolation boundaries in flash memory cores, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Isolation boundaries in flash memory cores will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-732461