Isolating substrate noise by forming semi-insulating regions

Details Isolating substrate noise by forming semi-insulating regions Isolating substrate noise by forming semi-insulating regions

2005-03-24

2009-02-17

Vu, Hung (Department: 2811)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S484000

Reexamination Certificate

active

07492018

ABSTRACT:
An integrated circuit structure for isolating substrate noise and a method of forming the same are provided. In the preferred embodiment of the present invention, a semi-insulating region is formed using proton bombardment in a substrate between a first circuit region and a second circuit region. Two guard rings are formed along the semi-insulating region, each on a side. A backside semi-insulating region is formed through proton bombardment from the back surface of the substrate into the substrate. The backside semi-insulating region is preferably connected with the semi-insulating region. A grounded guard layer is preferably formed on the backside semi-insulating region.

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patent: 2002/0025610 (2002-02-01), Litwin et al.

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