Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Patent
1994-08-31
1999-09-28
Abraham, Fetsum
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
257296, 257300, 257301, 257302, 257303, 257509, 257510, 438296, 438359, 438391, H01C 2120
Patent
active
059593229
ABSTRACT:
A semiconductor device and method for manufacturing the same includes a plurality of memory cells, each cell having a transistor formed on a first semiconductor substrate and comprising first and second impurity regions and a gate electrode, and a compacitor comprising a first electrode connected with the first impurity region of the transistor and a second electrode formed on the first electrode with a dielectric film disposed therebetween, wherein a channel region formed between the first impurity region and the second impurity region of the transistor is vertically located on the capacitor, and a contact hole connecting the second impurity region of the transistor with the bit-line is vertically located on the channel region, thus achieving the cell area required for one-giga-bit memory devices and beyond and enabling increased capacitance.
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Abraham Fetsum
Samsung Electronics Co,. Ltd.
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