Isolated-nitride-region non-volatile memory cell and...

Details Isolated-nitride-region non-volatile memory cell and... Isolated-nitride-region non-volatile memory cell and...

2011-03-22

2011-03-22

Smith, Bradley K (Department: 2894)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

C257SE21682

Reexamination Certificate

active

07910436

ABSTRACT:
An isolated-nitride-region non-volatile memory cell is formed in a semiconductor substrate. Spaced-apart source and drain regions are disposed in the semiconductor substrate forming a channel therebetween. An insulating region is disposed over the semiconductor substrate. A gate is disposed over the insulating region and is horizontally aligned with the channel. A plurality of isolated nitride regions are disposed in the insulating region and are not in contact with either the channel or the gate.

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