Isolated LDMOS IC technology

Details Isolated LDMOS IC technology Isolated LDMOS IC technology

2007-04-04

2009-06-30

Pham, Long (Department: 2814)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

C439S307000, C439S197000

Reexamination Certificate

active

07553733

ABSTRACT:
A lateral double diffused metal oxide semiconductor (LDMOS) device includes a gate to control the device, a drain coupled to the gate formed in a well of a first type, a source to form a current path with the drain, and a first field oxide region disposed between the gate and the drain. The gate is formed over a first portion of the well of the first type and a channel portion of the well of the second type. The LDMOS also includes a second field oxide region, which is disposed between the edges of the drain and the well of the second type. A dummy polysilicon layer, which is formed to cover approximately one half of the second field oxide with a remaining portion of the dummy polysilicon layer covering a second portion of the well of the second type, reduces the electric field in the drift region.

REFERENCES:
patent: 2005/0285189 (2005-12-01), Shibib et al.

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