Isolated complementary MOS devices in epi-less substrate

Details Isolated complementary MOS devices in epi-less substrate Isolated complementary MOS devices in epi-less substrate

2005-05-31

2005-05-31

Lebentritt, Michael (Department: 2824)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

C438S217000, C438S451000, C438S473000, C438S528000

Reexamination Certificate

active

06900091

ABSTRACT:
An structure for electrically isolating a semiconductor device is formed by implanting dopant into a semiconductor substrate that does not include an epitaxial layer. Following the implant the structure is exposed to a very limited thermal budget so that dopant does not diffuse significantly. As a result, the dimensions of the isolation structure are limited and defined, thereby allowing a higher packing density than obtainable using conventional processes which include the growth of an epitaxial layer and diffusion of the dopants. In one group of embodiments, the isolation structure includes a deep layer and a sidewall which together form a cup-shaped structure surrounding an enclosed region in which the isolated semiconductor device may be formed. The sidewalls may be formed by a series of pulsed implants at different energies, thereby creating a stack of overlapping implanted regions.

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