Chemistry: electrical and wave energy – Apparatus – Coating – forming or etching by sputtering
Reexamination Certificate
2008-07-29
2008-07-29
Neckel, Alexa D. (Department: 1795)
Chemistry: electrical and wave energy
Apparatus
Coating, forming or etching by sputtering
C118S715000, C118S7230AN, C118S7230IR, C156S345480, C204S192100, C204S192120, C204S192300, C204S298060, C204S298110, C219S121430, C315S111210, C315S111410, C427S569000
Reexamination Certificate
active
07404879
ABSTRACT:
Provided is an ionized physical vapor deposition (IPVD) apparatus having a helical self-resonant coil. The IPVD apparatus comprises a process chamber having a substrate holder that supports a substrate to be processed, a deposition material source that supplies a material to be deposited on the substrate into the process chamber, facing the substrate holder, a gas injection unit to inject a process gas into the process chamber, a bias power source that applies a bias potential to the substrate holder, a helical self-resonant coil that produces plasma for ionization of the deposition material in the process chamber, one end of the helical self-resonant coil being grounded and the other end being electrically open, and an RF generator to supply an RF power to the helical self-resonant coil. The use of a helical self-resonant coil enables the IPVD apparatus to ignite and operate at very low chamber pressure such as approximately 0.1 mtorr, and to produce high density plasma with high efficiency compared to a conventional IPVD apparatus. Accordingly, a high efficiency of ionization of deposition material is achieved.
REFERENCES:
patent: 5234529 (1993-08-01), Johnson
patent: 5522934 (1996-06-01), Suzuki et al.
patent: 5763851 (1998-06-01), Forster et al.
patent: 5903106 (1999-05-01), Young et al.
patent: 5961793 (1999-10-01), Ngan
patent: 6117279 (2000-09-01), Smolanoff et al.
patent: 6184623 (2001-02-01), Sugai et al.
patent: 6238528 (2001-05-01), Xu et al.
patent: 6251241 (2001-06-01), Shin et al.
patent: 6254745 (2001-07-01), Vukovic
patent: 6308654 (2001-10-01), Schneider et al.
patent: 6361667 (2002-03-01), Kobayashi et al.
patent: 6695954 (2004-02-01), Hong
patent: 6929720 (2005-08-01), Reynolds
patent: 6946054 (2005-09-01), Brcka
patent: 7182816 (2007-02-01), Kleshock et al.
patent: 2001/0022158 (2001-09-01), Broka
patent: 2002/0104751 (2002-08-01), Drewery et al.
patent: 2002/0125223 (2002-09-01), Johnson et al.
patent: 2002/0187280 (2002-12-01), JOhnson et al.
patent: 10-259480 (1998-09-01), None
patent: 11-323543 (1999-11-01), None
patent: 2000-273629 (2000-10-01), None
patent: 2003-525519 (2003-08-01), None
patent: WO 01/65895 (2001-09-01), None
Kim Dae-il
Ma Dong-joon
Navala Sergiy Yakovlevich
Tolmachev Yuri Nikolaevich
Band Michael
Buchanan & Ingersoll & Rooney PC
Neckel Alexa D.
Samsung Electronics Co,. Ltd.
LandOfFree
Ionized physical vapor deposition apparatus using helical... does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Ionized physical vapor deposition apparatus using helical..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Ionized physical vapor deposition apparatus using helical... will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-2810786