Ion irradiation of a target at very high and very low...

Radiant energy – Irradiation of objects or material – Irradiation of semiconductor devices

Reexamination Certificate

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C250S492220, C250S492230, C250S492200, C250S492100, C250S492300, C250S3960ML, C250S3960ML, C250S398000, C430S030000

Reexamination Certificate

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06909103

ABSTRACT:
A particle-beam exposure apparatus (1) for irradiating a target (41) by means of a beam (2) of energetic electrically charged particles comprises: an illumination system (101) for generating and forming said particles into a directed beam (21); a pattern definition means (102) located after the illumination system for positioning a pattern of apertures transparent to the particles in the path of the directed beam, thus forming a patterned beam (22) emerging from the pattern definition means through the apertures; and a projection system (103) positioned after the pattern definition means (102) for projecting the patterned beam (22) onto a target (41) positioned after the projection system. The apparatus further comprises an acceleration/deceleration means (32) containing an electric potential gradient which is oriented substantially parallel to the path of the structured beam and constant over at least a cross-section of the beam.

REFERENCES:
patent: 3983401 (1976-09-01), Livesay
patent: 4985634 (1991-01-01), Stengl et al.
patent: 5742062 (1998-04-01), Stengl et al.
patent: 6429441 (2002-08-01), Nakasuji
patent: 2005/0012052 (2005-01-01), Platzgummer et al.
Gillaspy, J.D., Parks, D.C., Ratliff, L.P.; “Masked Ion Beam Lithography with Highly Charged Ions”; J. Vac. Sci. Technol. B16(6); Nov./Dec. 1998, American Vacuum Society; pp. 3294-3297.
Werner, T., Zschornack, G., Grossmann, F., Ovsyannikov, V.P., Ullmann, F.; “The Dresden EBIT: An Ion Source for Materials Research and Technological Applications of Low Energy Highly Charged Ions”; Nuclear Instruments and Methods in Physics Research B 178 (2001), Elsevier Science B.V.; pp. 260-264.

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