Radiant energy – Irradiation of objects or material – Irradiation of semiconductor devices
Reexamination Certificate
2005-06-21
2005-06-21
Nguyen, Kiet T. (Department: 2881)
Radiant energy
Irradiation of objects or material
Irradiation of semiconductor devices
C250S397000
Reexamination Certificate
active
06909102
ABSTRACT:
An ion implanter system, method and program product for detecting at least one particle level in an beam and controlling the ion beam based on the at least one particle level during any stage of operation including ion implantation. A bright-field laser particle detector is employed that transmits and receives the laser beam directly through at least a portion of the ion beam to obtain an accurate particle level. The invention allows for observance of ion beam-borne particles and correction of the ion beam by a system controller in real-time to minimize particle level(s). During ion implantation, processing may be stopped until particle level(s) are below a preset value. The invention allows particle level detection during implantation such that post implant steps to check wafer particle levels are unnecessary.
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Nguyen Kiet T.
Varian Semiconductor Equipment Associates Inc.
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