Ion implanter electrodes

Details Ion implanter electrodes Ion implanter electrodes

2006-08-08

2006-08-08

Wells, Nikita (Department: 2881)

Radiant energy

Irradiation of objects or material

Irradiation of semiconductor devices

C250S492200, C250S492100, C250S398000

Reexamination Certificate

active

07087913

ABSTRACT:
Provided is an ion implanter having a deceleration lens assembly comprising a plurality of electrodes in which one or more of the apertures of the deceleration electrodes are shaped in a manner which can improve performance of the ion implanter. In one embodiment, an electrode aperture is generally elliptical in shape and conforms generally to the shape of the beam passing through the aperture. In another aspect, an axis segment extends 40% of the length of the aperture from the aperture center to an intermediate point at the end of the segment. The average width of the aperture measured at each point from the center to the intermediate point is substantially less than the maximum width of the aperture.

REFERENCES:
patent: 4450031 (1984-05-01), Ono et al.
patent: 4595837 (1986-06-01), Wu et al.
patent: 4684848 (1987-08-01), Kaufman et al.
patent: 4804852 (1989-02-01), Rose et al.
patent: 5132544 (1992-07-01), Glavish
patent: 5306920 (1994-04-01), King et al.
patent: 5350924 (1994-09-01), Stengl et al.
patent: 5420415 (1995-05-01), Trueira
patent: 5808310 (1998-09-01), Yamashita et al.
patent: 5811820 (1998-09-01), Kirchner et al.
patent: 5825038 (1998-10-01), Blake et al.
patent: 5932882 (1999-08-01), England et al.
patent: 5962859 (1999-10-01), Groves et al.
patent: 5969366 (1999-10-01), England et al.
patent: 6414329 (2002-07-01), Benveniste et al.
patent: 6423976 (2002-07-01), Glavish et al.
patent: 6441382 (2002-08-01), Huang
patent: 6534775 (2003-03-01), Harrington et al.
patent: 6777882 (2004-08-01), Goldberg et al.
patent: 2003/0066976 (2003-04-01), Chen et al.
patent: 0237165 (1987-09-01), None
patent: 0559359 (1993-09-01), None
patent: 1274352 (1989-11-01), None
patent: 2112140 (1990-04-01), None
patent: 02043803 (2002-06-01), None
PCT/US04/33893 International Search Report mailed Jul. 26, 2005 (Atty ID 008446PCTP01).
Vitzethum et al. “From High-Speed, High-Gain Photo-conductive Receivers to Single-Photon Detectors,” Proc. 11thIntl Workshop on Physics of Semiconductor Devices, Dec. 11-15, 2001 - Delhi, India, vol. 1, pp. 3-11; 2002.

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