Semiconductor device manufacturing: process – Formation of semiconductive active region on any substrate – Fluid growth from gaseous state combined with preceding...
Reexamination Certificate
2009-02-06
2010-12-28
Le, Thao P. (Department: 2818)
Semiconductor device manufacturing: process
Formation of semiconductive active region on any substrate
Fluid growth from gaseous state combined with preceding...
C257SE21057
Reexamination Certificate
active
07858503
ABSTRACT:
In an ion implantation method, a substrate is placed in a process zone and ions are implanted into a region of the substrate to form an ion implanted region. A porous capping layer is deposited on the ion implanted region. The substrate is annealed to volatize at least 80% of the porous capping layer overlying the ion implanted region during the annealing process. An intermediate product comprises a substrate, a plurality of ion implantation regions on the substrate, and a porous capping layer covering the ion implantation regions.
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International Search Report & Written Opinion of the ISA/KR (KIPO) in PCT Appl. No. PCT/US09/69754, Jul. 27, 2010, (Seo-gu, Daejeon, Korea).
Del Agua Borniquel Jose Ignacio
Foad Majeed
Poon Tze
Schreutelkamp Robert
Applied Materials Inc.
Janah Ashok K.
Le Thao P.
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