Radiant energy – Irradiation of objects or material – Irradiation of semiconductor devices
Patent
1993-03-02
1994-04-26
Berman, Jack I.
Radiant energy
Irradiation of objects or material
Irradiation of semiconductor devices
250423R, 31511141, H01J 2702, H01J 3700
Patent
active
053069218
ABSTRACT:
Electric discharge gas is made into auxiliary plasma in an electron generating chamber and electrons in the generated auxiliary plasma are introduced into an ion generating chamber. Electrons collide with molecules of material gas in the ion generating chamber to generate primary plasma. Ions in the ion generating chamber are drawn out of the primary plasma through an opening of the ion generating chamber. A magnetic field is formed by electromagnets in order to bring the plasma in the ion generating chamber into a concentrated state. A control unit is provided to store data representing optimum magnetic field intensities for ions of different types involved. The control unit so controls current applied by the power supply for the electromagnets as to produce an optimum magnetic field intensity for the type of ions to be drawn.
REFERENCES:
patent: 4757237 (1988-07-01), Hellblom et al.
patent: 4859908 (1989-08-01), Yoshida et al.
patent: 5051659 (1991-09-01), Uhm et al.
patent: 5083061 (1992-01-01), Koshiishi et al.
patent: 5089747 (1992-02-01), Koshiishi et al.
Takayama Naoki
Tanaka Hisato
Berman Jack I.
Beyer James
Tokyo Electron Limited
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