Production of high beam currents at low energies for use in ion

Details Production of high beam currents at low energies for use in ion Production of high beam currents at low energies for use in ion

1993-03-16

1994-04-26

Berman, Jack I.

Radiant energy

Irradiation of objects or material

Irradiation of semiconductor devices

250398, H01J 37317

Patent

active

053069226

ABSTRACT:
As geometries of semiconductor devices shrink in size and the number of circuits per unit area increase, a number of the ion implants required to fabricate these devices will use very low energies (as low as 2 keV). In the present invention, a technique is utilized that generates substantial beam currents at low energies utilizing ion sources that are standard in the industry. Molecular ions are extracted from the plasma of the ion source at voltages numerically higher than the desired electron voltage at which the desired atomic ions are to strike the target, and are then dissociated into components which include the desired atomic ions moving with an energy which is a fraction of that at which the molecular ions were extracted.

REFERENCES:
patent: 4037100 (1977-07-01), Purser
patent: 4209704 (1980-06-01), Krimmel
patent: 5216253 (1993-06-01), Koike

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