Semiconductor device manufacturing: process – Introduction of conductivity modifying dopant into... – Ion implantation of dopant into semiconductor region
Reexamination Certificate
2006-02-07
2006-02-07
Baumeister, B. William (Department: 2891)
Semiconductor device manufacturing: process
Introduction of conductivity modifying dopant into...
Ion implantation of dopant into semiconductor region
C438S515000, C438S529000, C438S542000, C438S561000, C438S565000
Reexamination Certificate
active
06995079
ABSTRACT:
An object of the present invention is to provide an ion implantation method for shortening a down time of an ion implantation apparatus after exposure of a chamber and for improving throughput and a method for manufacturing a semiconductor device. Specifically, the object of the invention is to provide an ion implantation method that can improve throughput during an ion implantation step of B and a method for manufacturing a semiconductor device. The ion implantation method comprises the steps of: introducing an impurity imparting p-type conductivity and H2O in an ion source; ionizing the impurity imparting p-type conductivity; and implanting into a semiconductor film.
REFERENCES:
patent: 3520741 (1970-07-01), Mankarious
patent: 3607449 (1971-09-01), Tokuyama et al.
patent: 4716127 (1987-12-01), Shukuri et al.
patent: 5789744 (1998-08-01), Spence et al.
patent: 5814819 (1998-09-01), Sinclair et al.
patent: 6013332 (2000-01-01), Goto et al.
patent: 2002/0100876 (2002-08-01), Murakoshi et al.
patent: 2002/0155679 (2002-10-01), Ogura et al.
patent: 2002/0166975 (2002-11-01), Reyes
patent: 2004/0000651 (2004-01-01), Horsky et al.
Platow et al. “Oxygen implants using water vapor as source feed gas in: high and medium current implanters” Ion Implantation Technology. 2002. Proceedings of the 14th International Conference on Sep. 22-27, 2002 pp.: 428-431.
Koezuka Junichi
Shinoda Hiroto
Baumeister B. William
Costellia Jeffrey L.
Lee, Jr. Granvill D.
Nixon & Peabody LLP
Semiconductor Energy Laboratory Co,. Ltd.
LandOfFree
Ion implantation method and method for manufacturing... does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Ion implantation method and method for manufacturing..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Ion implantation method and method for manufacturing... will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-3640451