Ion implantation method

Details Ion implantation method Ion implantation method

2006-05-30

2006-05-30

Smith, Zandra V. (Department: 2822)

Semiconductor device manufacturing: process

Introduction of conductivity modifying dopant into...

Ion implantation of dopant into semiconductor region

C438S480000, C438S766000

Reexamination Certificate

active

07052981

ABSTRACT:
Disclosed is an ion implantation method capable of preventing a channeling phenomenon caused by a lattice structure of a semiconductor substrate. The ion implantation method includes the steps of forming a predetermined mask pattern on the semiconductor substrate, performing an ion implantation process with respect to the semiconductor substrate exposed by the predetermined mask without forming a tilt angle, thereby forming an impurity area in the semiconductor substrate, and applying vibration to a lattice structure of the semiconductor substrate when the ion implantation process is carried out with respect to the semiconductor substrate.

REFERENCES:
patent: 4253888 (1981-03-01), Kikuchi
patent: 6869865 (2005-03-01), Maegawa et al.

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