Ion implantation helicon plasma source with magnetic dipoles

Details Ion implantation helicon plasma source with magnetic dipoles Ion implantation helicon plasma source with magnetic dipoles

1995-12-20

1997-11-11

Pascal, Robert

Electric lamp and discharge devices: systems

Discharge device load with fluent material supply to the...

Plasma generating

31323131, 118723I, 20429837, H05H 124

Patent

active

056867964

ABSTRACT:
Disclosed is an ion implantation source for producing a plasma with an electron cyclotron resonance zone including a chamber for plasma processing and having at least one extraction slit, said extraction slit situated at a first end of the chamber; at least one antenna encircling the chamber for prodding a radio frequency induced electromagnetic field to generate an inductive/helicon plasma within the chamber; a plurality of magnetic dipoles at the periphery of the chamber; and at least one magnetic dipole at a second end of the chamber; the magnetic dipoles at the periphery and second end of the chamber having their fields directed towards the interior of the chamber, wherein the fields are adjacent to the periphery and the second end of the chamber and keep the plasma spaced from the periphery and the second end of the chamber.

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IBM Technical Disclosure Bulletin, vol. 35, No. 5, Oct. 1992, J. J. Cuomo et al., Compact Microwave Plasma Source, pp. 307-308.

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