Radiant energy – Irradiation of objects or material – Irradiation of semiconductor devices
Reexamination Certificate
2006-12-29
2009-02-17
Wells, Nikita (Department: 2881)
Radiant energy
Irradiation of objects or material
Irradiation of semiconductor devices
C250S3960ML, C250S298000, C250S492200
Reexamination Certificate
active
07491953
ABSTRACT:
An ion implantation device and a method of manufacturing a semiconductor device is described, wherein ionized boron hydride molecular clusters are implanted to form P-type transistor structures. The molecular cluster ions have the chemical form BnHx+ and BnHx−, where 10<n<100 and 0≦x≦n+4. The use of such boron hydride clusters results in a dramatic increase in wafer throughput, as well as improved device yields through the reduction of wafer charging.A method of manufacturing a semiconductor device is further described, comprising the steps of: providing a supply of molecules containing a plurality of dopant atoms into an ionization chamber, ionizing said molecules into dopant cluster ions, extracting and accelerating the dopant cluster ions with an electric field, selecting the desired cluster ions by mass analysis, modifying the final implant energy of the cluster ion through post-analysis ion optics, and implanting the dopant cluster ions into a semiconductor substrate.
REFERENCES:
patent: 3557365 (1971-01-01), Mayo
patent: 3581195 (1971-05-01), Jepsen
patent: 3908183 (1975-09-01), Ennis, Jr.
patent: 3915757 (1975-10-01), Engel
patent: 4053826 (1977-10-01), Wasawa et al.
patent: 4112306 (1978-09-01), Nunan
patent: 4120700 (1978-10-01), Morimoto
patent: 4123686 (1978-10-01), Keller et al.
patent: 4152478 (1979-05-01), Takagi
patent: 4217855 (1980-08-01), Takagi
patent: 4326786 (1982-04-01), Uchiyama et al.
patent: 4366459 (1982-12-01), Vitola
patent: 4412900 (1983-11-01), Tanaka et al.
patent: 4587432 (1986-05-01), Aitken
patent: 4649278 (1987-03-01), Chutjian et al.
patent: 4740698 (1988-04-01), Tamura et al.
patent: 4904902 (1990-02-01), Tamai et al.
patent: 4937545 (1990-06-01), Chaillout et al.
patent: 4943718 (1990-07-01), Haines et al.
patent: 5293508 (1994-03-01), Shiratake et al.
patent: 5313061 (1994-05-01), Drew et al.
patent: 5489550 (1996-02-01), Moslehi
patent: 5528034 (1996-06-01), Yamazaki et al.
patent: 5543625 (1996-08-01), Johnson et al.
patent: 5561326 (1996-10-01), Ito et al.
patent: 5672879 (1997-09-01), Glavish
patent: 5686789 (1997-11-01), Schoenbach et al.
patent: 5993766 (1999-11-01), Tom et al.
patent: 6013332 (2000-01-01), Goto et al.
patent: 6013546 (2000-01-01), Gardner et al.
patent: 6352626 (2002-03-01), Von Zweck
patent: 6403956 (2002-06-01), Sinha
patent: 6452338 (2002-09-01), Horsky
patent: 6686595 (2004-02-01), Horsky
patent: 6744214 (2004-06-01), Horsky
patent: 2002/0019132 (2002-02-01), Pittaluga et al.
patent: 2002/0070672 (2002-06-01), Horsky
patent: 2003/0001095 (2003-01-01), Lo et al.
patent: 2003/0030010 (2003-02-01), Perel et al.
patent: 2003/0111014 (2003-06-01), Donatucci et al.
patent: 2005/0258380 (2005-11-01), White et al.
patent: 2006/0097193 (2006-05-01), Horsky et al.
patent: 2007/0181830 (2007-08-01), Horsky et al.
patent: 03762087 (2008-01-01), None
patent: 1258125 (1971-12-01), None
Intl. Search Report, PCT/US03/20197.
Boggia et al., Study of a Trapped Ion Source, IEEE Journal, pp. 1433-1435.
Brautti et al., Trapped Ion Source, IEEE Journal; 1988, pp. 2729-2731.
Chenglu et al., Nuclear Instruments and Methods in Physics Research, 1989, pp. 384-386.
Defino et al., J. Electrochemical Society, vol. 133, No. 9, 1986, pp. 1900-1904.
Jacobson et al., Decaborane, an Alternative Approach to Ultra Low Energy Ion Implantation, IEEE Journal, 2000, pp. 300-303.
Kishimoto, A High-Current Negative-Ion Implanter and its Application for Nanocrystal Fabrication in Insulators, IEEE Journal, 1999, pp. 342-345.
Olsen et al., J. Amer. Chem. Society, vol. 90, No. 15, Jul. 17, 1968, pp. 3946-3951.
Tsubouchi et al., Beam Characterization of Mass-Separated, Low-Energy Positive and Negative Ions Deposition Apparatus, IEEE Proc. Of the XIIth Intl. Conf. on Ion Implantation Technology, Jun. 22-26, 1998, pp. 350-353.
Yamada, Applications of Gas Cluster Ion Beams for Materials Processing.
U.S. Appl. No. 10/519,699, Sep. 14, 2005, Horsky.
Goto et al. “Novel Shallow Junction Technology Using Decarborane (B10H14)” Electron Devices Meeting, 1996., Int'l San Francisco, CA, USA Dec. 8-11, 1996, NY, NY, USA, IEEE, US, p. 435-438, XP010207579.
Ishikawa et al.: “Negative-Ion Implantation Technique” Nuclear Instruments & Methods in Physics Research, Section-B: Beam Interactions With Materials and Atoms, Elsevier,, Amsterdam, NL, vol. 96, No. ½, Mar. 1995, pp. 7-12, XP004010949.
Takeuchi et al. “Shallow Junction formation By Polyatomic Cluster Ion Implantation”, Austin, TX, US Jun. 16-21, 1996, NY, NY USA, IEEE, US p. 772-775, XP010220650.
Horsky Thomas N.
Jacobson Dale C.
Katten Muchin & Rosenman LLP
Paniaguas John S.
Semequip Inc.
Smith II Johnnie L
Wells Nikita
LandOfFree
Ion implantation device and a method of semiconductor... does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Ion implantation device and a method of semiconductor..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Ion implantation device and a method of semiconductor... will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-4112854