Radiant energy – Irradiation of objects or material – Irradiation of semiconductor devices
Patent
1992-06-15
1993-11-16
Dzierzynski, Paul M.
Radiant energy
Irradiation of objects or material
Irradiation of semiconductor devices
250423R, 250424, 250426, 250427, H01J 2700
Patent
active
052626520
ABSTRACT:
Ion implantation equipment is modified so as to provide filament reflectors to a filament inside of an arc chamber, and to remove the electrical insulators for the filament outside of the arc chamber and providing a means of shielding, thereby reducing the formation of a conductive layer on said insulators and greatly extending the lifetime and reducing downtime of the equipment. The efficiency of the equipment is further enhanced by means of an interchangeable liner for the arc chamber that increases the wall temperature of the arc chamber and thus the electron temperature. The use of tungsten parts inside the arc chamber, obtained either by making the arc chamber itself or portions thereof of tungsten, particularly the front plate having the exit aperture for the ion beam, or by inserting a removable tungsten liner therein, decreases contamination of the ion beam. Serviceability of the arc chamber is improved by means of a unitary clamp that separately grips both the filament and filament reflectors. This clamp can also advantageously be made of tungsten.
REFERENCES:
patent: 3705320 (1972-12-01), Freeman
patent: 4017403 (1977-04-01), Freeman
patent: 4135093 (1979-01-01), Kim
patent: 4383177 (1983-05-01), Keller et al.
patent: 4447773 (1984-05-01), Aston
patent: 4578589 (1986-03-01), Aitken
patent: 4719355 (1988-01-01), Meyers et al.
patent: 4754200 (1988-06-01), Plumb et al.
patent: 4792687 (1988-12-01), Mobley
patent: 5144143 (1992-09-01), Raspugliesi et al.
patent: 5162699 (1992-11-01), Tokoro et al.
"White Ion Beam Production . . . " Beam Processing Technol. Academic Press: (1991) pp. 369-376.
Freeman, "A New Ion Source . . . " Nuclear Instru. & Methods (1063) pp. 306-316 (Aug. 30, 1962).
Anand et al "A Low Cost Ion Implantation System": Electro Engr. 1977.
Aston, "High Efficiency Ion Beam . . . ", Rev. Sc. Instru. 52(9) Sppt. 1981.
Aitken, "The Design Philosophy . . . " Nuclear Instru. & Methods, (1976) pp. 125-134.
Bright Nicholas
Burfield Paul A.
Burgin David R.
Devaney Andrew S.
Harrison Bernard F.
Applied Materials Inc.
Dzierzynski Paul M.
Morris Birgit E.
Nguyen Kiet T.
LandOfFree
Ion implantation apparatus having increased source lifetime does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Ion implantation apparatus having increased source lifetime, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Ion implantation apparatus having increased source lifetime will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-24073