Ion implantation apparatus for controlling the surface potential

Details Ion implantation apparatus for controlling the surface potential Ion implantation apparatus for controlling the surface potential

1977-05-05

1979-01-16

Dixon, Harold A.

Radiant energy

Irradiation of objects or material

Irradiation of semiconductor devices

250306, 250398, A61K 2702

Patent

active

041350979

ABSTRACT:
In an ion beam apparatus a structure for controlling the surface potential of the target comprising an electron source adjacent to the beam for providing electrons to the beam and means between the target and source for inhibiting rectilinear radiations, i.e., electron and other particle and photon radiations between said source and said target. This prevents heating of the target by the electron source and cross-contamination between the source and the target. A further structure is provided for the measurement of the ion beam current while controlling said surface potential of the target which includes: walls adjacent to and electrically insulated from the target and surrounding the beam whereby the walls and target provide a Faraday Cage, means for introducing variable quantities of electrons into the beam within the Faraday Cage, means for measuring the target current, means for combining and measuring the target and wall currents to provide said ion beam current measurement and means for varying the quantities of introduced electrons to control the target current and thereby the target surface potential.

REFERENCES:
patent: B518226 (1976-02-01), McGinty
patent: 2467224 (1949-04-01), Picard
patent: 2890342 (1959-06-01), Columbe
patent: 3182220 (1965-05-01), Gabor
patent: 3507709 (1970-04-01), Bower
patent: 3547074 (1970-12-01), Hirschfeld
patent: 3622782 (1971-11-01), Smith
patent: 4011449 (1977-03-01), Ko et al.

Affiliated with

Also associated with

Rating

Ion implantation apparatus for controlling the surface potential does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Ion implantation apparatus for controlling the surface potential, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Ion implantation apparatus for controlling the surface potential will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-653050