Ion implant beam angle integrity monitoring and adjusting

Details Ion implant beam angle integrity monitoring and adjusting Ion implant beam angle integrity monitoring and adjusting

2005-08-31

2008-12-02

Berman, Jack I (Department: 2881)

Radiant energy

Irradiation of objects or material

Irradiation of semiconductor devices

C250S492100

Reexamination Certificate

active

07459703

ABSTRACT:
A system, method and program product for monitoring the beam angle integrity of an ion beam generated by an ion implanter system are disclosed. The invention utilizes at least one template with each template having a template surface that impedes the motion of an ion. Each template is configured such that an ion impacts the surface of the template if the trajectory of the template deviates from the optimum trajectory by a pre-determined maximum variance angle. The change caused by the impact of the ions with the template and/or a target is then measured to determine the amount of variance in the ion beam. Adjustments can then be made to the ion beam generator to correct for a misaligned beam.

REFERENCES:
patent: 6852984 (2005-02-01), Krueger

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