Ion energy attenuation method by determining the required number

Details Ion energy attenuation method by determining the required number Ion energy attenuation method by determining the required number

1998-06-10

2000-01-11

Bettendorf, Justin P.

Electric lamp and discharge devices: systems

Discharge device load with fluent material supply to the...

Plasma generating

361234, H05H 124

Patent

active

060139846

ABSTRACT:
A method and an apparatus for controlling the location where the formation of a contamination layer occurs in a plasma processing system is disclosed. The control is accomplished by reducing the released ion's kinetic energy to approximately at most the surface potential of the selected surface to which it is to combine within the desired location.

REFERENCES:
patent: 5572398 (1996-11-01), Federlin et al.
patent: 5606485 (1997-02-01), Shamouilian et al.
patent: 5740009 (1998-04-01), Pu et al.

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