Ion doping method to form source and drain

Details Ion doping method to form source and drain Ion doping method to form source and drain

2007-10-16

2007-10-16

Chen, Jack (Department: 2813)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

C438S197000, C438S303000, C438S549000, C438S585000, C438S976000

Reexamination Certificate

active

11527505

ABSTRACT:
An ion doping method to form source and drain is disclosed. First form a gate structure and a gate spacer on a semiconductor substrate, and then use dielectric layer having trenches therein to define heavily ion-doped positions and use a Y-shaped polysilicon layer formed in the trenches. Perform an ion implantation, by using the polysilicon layer, gate spacer and dielectric layer as a barrier layer, to naturally form ion doped regions of source/drain, so as to make components, which are minimized in the increased packing density, still have a gate structure keeping an enough channel length.

REFERENCES:
patent: 7115509 (2006-10-01), Chen et al.

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