Ion beam monitoring in an ion implanter using an imaging device

Radiant energy – Irradiation of objects or material – Irradiation of semiconductor devices

Reexamination Certificate

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C250S492230, C250S3960ML, C250S398000, C250S42300F, C250S424000

Reexamination Certificate

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11374945

ABSTRACT:
An image monitor system monitors characteristics of an ion beam employed in ion implantation. The monitored characteristics can include particle count, particle information, beam current intensity, beam shape, and the like. The system includes one or more image sensors that capture frames or images along a beam path of an ion beam. An image analyzer analyzes the captured frames to obtain measured characteristics. A controller determines adjustments or corrections according to the measured characteristics and desired beam characteristics.

REFERENCES:
patent: 4739177 (1988-04-01), Borden
patent: 5076692 (1991-12-01), Neukermans et al.
patent: 5255089 (1993-10-01), Dybas et al.
patent: 5751422 (1998-05-01), Mitchell
patent: 2007/0178678 (2007-08-01), Hatem et al.

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