Ion beam monitoring in an ion implanter using an imaging device

Details Ion beam monitoring in an ion implanter using an imaging device Ion beam monitoring in an ion implanter using an imaging device

2008-09-09

2008-09-09

Wells, Nikita (Department: 2881)

Radiant energy

Irradiation of objects or material

Irradiation of semiconductor devices

C250S492230, C250S3960ML, C250S398000, C250S42300F, C250S424000

Reexamination Certificate

active

11374945

ABSTRACT:
An image monitor system monitors characteristics of an ion beam employed in ion implantation. The monitored characteristics can include particle count, particle information, beam current intensity, beam shape, and the like. The system includes one or more image sensors that capture frames or images along a beam path of an ion beam. An image analyzer analyzes the captured frames to obtain measured characteristics. A controller determines adjustments or corrections according to the measured characteristics and desired beam characteristics.

REFERENCES:
patent: 4739177 (1988-04-01), Borden
patent: 5076692 (1991-12-01), Neukermans et al.
patent: 5255089 (1993-10-01), Dybas et al.
patent: 5751422 (1998-05-01), Mitchell
patent: 2007/0178678 (2007-08-01), Hatem et al.

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