Ion beam implant current, spot width and position tuning

Details Ion beam implant current, spot width and position tuning Ion beam implant current, spot width and position tuning

2004-10-07

2008-10-28

Vanore, David A (Department: 2881)

Radiant energy

Irradiation of objects or material

Irradiation of semiconductor devices

C250S492200, C250S397000, C250S3960ML

Reexamination Certificate

active

07442944

ABSTRACT:
An ion beam tuning method, system and program product for tuning an ion implanter system are disclosed. The invention obtains an ion beam profile of the ion beam by, for example, scanning the ion beam across a profiler that is within an implant chamber; and tunes the ion implanter system to maximize an estimated implant current based on the ion beam profile to simultaneously optimize total ion beam current and ion beam spot width, and maximize implant current. In addition, the tuning can also position the ion beam along a desired ion beam path based on the feedback of the spot beam center, which improves ion implanter system productivity and performance by reducing ion beam setup time and provides repeatable beam angle performance for each ion beam over many setups.

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