Ion beam guide tube

Radiant energy – Irradiation of objects or material – Irradiation of semiconductor devices

Reexamination Certificate

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C250S42300F, C250S492200, C315S111810

Reexamination Certificate

active

07872247

ABSTRACT:
A guide tube for an ion beam in an ion implanter which is located adjacent a semiconductor wafer being implanted has an outwardly tapering central bore, thereby alleviating problems of beam strike as the ion beam passes through the guide tube.

REFERENCES:
patent: 5399871 (1995-03-01), Ito et al.
patent: 5925886 (1999-07-01), Seki et al.
patent: 5969366 (1999-10-01), England et al.
patent: 6101536 (2000-08-01), Kotani et al.
patent: 6501081 (2002-12-01), Foad et al.
patent: 7573051 (2009-08-01), Goldberg
patent: 2005/0191409 (2005-09-01), Murrell et al.

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