Ion beam exposure of (g-Ge.sub.x -Se.sub.1-x) inorganic resists

Details Ion beam exposure of (g-Ge.sub.x -Se.sub.1-x) inorganic resists Ion beam exposure of (g-Ge.sub.x -Se.sub.1-x) inorganic resists

1981-06-22

1983-09-20

Downey, Mary F.

Radiation imagery chemistry: process, composition, or product th

Imaging affecting physical property of radiation sensitive...

Making electrical device

430312, 430396, 430935, 430296, 430325, 430326, 427 91, 427 99, 427124, G03C 500

Patent

active

044057105

ABSTRACT:
This invention relates to thin (g-Ge.sub.x -Se.sub.1--x) positive ionresists and thin (g-Ge.sub.x -Se.sub.1--x) with absorbed or chemically bonded silver as a negative ionresist, which when exposed to H.sup.+ ion beams and subsequently developed, for example by alkaline solutions, have a useful differential dissolution rate, when comparing exposed and unexposed areas, with excellent resolution. The ionresist materials and processes of the invention are useful, for example, in forming solid-state electronic articles.

REFERENCES:
patent: 4127414 (1978-11-01), Yoshikawa et al.
patent: 4269935 (1981-05-01), Masters et al.
patent: 4276368 (1981-06-01), Heller

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