Ion beam apparatus

Details Ion beam apparatus Ion beam apparatus

1985-05-20

1987-08-18

Anderson, Bruce C.

Radiant energy

Inspection of solids or liquids by charged particles

Positive ion probe or microscope type

250306, G01N 2300

Patent

active

046879307

ABSTRACT:
The surface of a specimen such as a semiconductor wafer is processed and analyzed by the irradiator of the surface with an ion beam. The zone of the specimen to be processed and analyzed is kept by heating at a temperature higher than the melting point of an element or compound forming the ion species used for the irradiation. The means used for this heating may be an electron beam source, a light source, a resistance heating source, or a high-frequency heating source.

REFERENCES:
patent: 3930155 (1975-12-01), Kanomata et al.

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