Ion-assisted oxidation methods and the resulting structures

Details Ion-assisted oxidation methods and the resulting structures Ion-assisted oxidation methods and the resulting structures

2008-05-13

2008-05-13

Wilczewski, M. (Department: 2822)

Semiconductor device manufacturing: process

Coating of substrate containing semiconductor region or of...

By reaction with substrate

C438S773000

Reexamination Certificate

active

07371697

ABSTRACT:
Oxidation methods and resulting structures including providing an oxide layer on a substrate and then re-oxidizing the oxide layer by vertical ion bombardment of the oxide layer in an atmosphere containing at least one oxidant. The oxide layer may be provided over diffusion regions, such as source and drain regions, in a substrate. The oxide layer may overlie the substrate and is proximate a gate structure on the substrate. The at least one oxidant may be oxygen, water, ozone, or hydrogen peroxide, or a mixture thereof. These oxidation methods provide a low-temperature oxidation process, less oxidation of the sidewalls of conductive layers in the gate structure, and less current leakage to the substrate from the gate structure.

REFERENCES:
patent: 3849276 (1974-11-01), Greiner
patent: 3943542 (1976-03-01), Ho et al.
patent: 4351712 (1982-09-01), Cuomo et al.
patent: 4652463 (1987-03-01), Peters
patent: 4776925 (1988-10-01), Fossum et al.
patent: 4784975 (1988-11-01), Hofmann et al.
patent: 4864375 (1989-09-01), Teng et al.
patent: 4902647 (1990-02-01), Chutjian et al.
patent: 4954867 (1990-09-01), Hosaka
patent: 4997746 (1991-03-01), Greco et al.
patent: 5146291 (1992-09-01), Watabe et al.
patent: 5183775 (1993-02-01), Levy
patent: 5210056 (1993-05-01), Pong et al.
patent: 5219773 (1993-06-01), Dunn
patent: 5279978 (1994-01-01), See et al.
patent: 5344793 (1994-09-01), Zeininger et al.
patent: 5349467 (1994-09-01), Sulzbach et al.
patent: 5382820 (1995-01-01), Yang et al.
patent: 5387546 (1995-02-01), Maeda et al.
patent: 5427962 (1995-06-01), Sasaki et al.
patent: 5436175 (1995-07-01), Nakato et al.
patent: 5436481 (1995-07-01), Egawa et al.
patent: 5508368 (1996-04-01), Knapp et al.
patent: 5521126 (1996-05-01), Okamura et al.
patent: 5527718 (1996-06-01), Seita et al.
patent: 5536679 (1996-07-01), Park
patent: 5559351 (1996-09-01), Takiyama
patent: 5702849 (1997-12-01), Sakata et al.
patent: 5714037 (1998-02-01), Puntambekar et al.
patent: 5723896 (1998-03-01), Yee et al.
patent: 5759900 (1998-06-01), Suh
patent: 5811326 (1998-09-01), Yamamoto
patent: 5836772 (1998-11-01), Chang et al.
patent: 5847427 (1998-12-01), Hagiwara
patent: 5852346 (1998-12-01), Komoda et al.
patent: 5885877 (1999-03-01), Gardner et al.
patent: 5892269 (1999-04-01), Inoue et al.
patent: 5915190 (1999-06-01), Pirkle
patent: 5930617 (1999-07-01), Wu
patent: 5965926 (1999-10-01), Schwalke
patent: 6010936 (2000-01-01), Son
patent: 6022794 (2000-02-01), Hsu
patent: 6037639 (2000-03-01), Ahmad
patent: 6083324 (2000-07-01), Henley et al.
patent: 6097062 (2000-08-01), Gardner et al.
patent: 6097069 (2000-08-01), Brown et al.
patent: 6110278 (2000-08-01), Saxena
patent: 6110794 (2000-08-01), Liu
patent: 6124216 (2000-09-01), Ko et al.
patent: 6127248 (2000-10-01), Kim
patent: 6198142 (2001-03-01), Chau et al.
patent: 6221743 (2001-04-01), Fujikawa et al.
patent: 6306712 (2001-10-01), Rodder et al.
patent: 6355580 (2002-03-01), Li et al.
patent: 6387741 (2002-05-01), Kawano
patent: 6429496 (2002-08-01), Li et al.
patent: 6518114 (2003-02-01), Inard et al.
patent: 6541393 (2003-04-01), Sugizaki et al.
patent: 6559027 (2003-05-01), Ishitsuka et al.
patent: 6566703 (2003-05-01), Liang et al.
patent: 6583070 (2003-06-01), Tsui et al.
patent: 6680505 (2004-01-01), Ohba et al.
patent: 6770538 (2004-08-01), Li et al.
patent: 6797649 (2004-09-01), Scherer et al.
patent: 6825132 (2004-11-01), Inoue et al.
patent: 7119033 (2006-10-01), Li et al.
patent: 2001/0018274 (2001-08-01), Sugizaki et al.
patent: 2002/0013055 (2002-01-01), Yamaguchi et al.
patent: 2002/0048888 (2002-04-01), Li et al.
patent: 2002/0158285 (2002-10-01), Clementi et al.
patent: 2002/0175382 (2002-11-01), Li et al.
patent: 2002/0185693 (2002-12-01), Yasuda et al.
patent: 2004/0266213 (2004-12-01), Li et al.
patent: 2005/0277259 (2005-12-01), Takami
patent: 2006/0023311 (2006-02-01), Scherer et al.
patent: 2006/0166419 (2006-07-01), Shimoyama et al.
patent: 2006/0199371 (2006-09-01), Mizuhara et al.
P. Osiceanu et al., “An ESCA Study on Ion Beam Included Oxidation of Si”, 1995 IEEE, pp. 159-162.
Watanabe, Jinzo, et al., “Ultra Low-Temperature Growth of High-Integrity Thin Gate Oxide Films by Low-Energy Ion-Assisted Oxidation,” Jpn. J. Appl. Phys., vol. 34 (Feb. 1995), pp. 900-902.

Affiliated with

Also associated with

Rating

Ion-assisted oxidation methods and the resulting structures does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Ion-assisted oxidation methods and the resulting structures, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Ion-assisted oxidation methods and the resulting structures will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-2800551