Inverted nonvolatile memory device, stack module, and method...

Details Inverted nonvolatile memory device, stack module, and method... Inverted nonvolatile memory device, stack module, and method...

2011-08-09

2011-08-09

Richards, N Drew (Department: 2895)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S314000, C257S315000, C257S318000, C257SE29300, C257SE21422, C257SE21662, C257SE21679, C257SE29309, C438S211000, C438S257000, C438S593000

Reexamination Certificate

active

07994588

ABSTRACT:
Example embodiments provide a nonvolatile memory device that may be integrated through stacking, a stack module, and a method of fabricating the nonvolatile memory device. In the nonvolatile memory device according to example embodiments, at least one bottom gate electrode may be formed on a substrate. At least one charge storage layer may be formed on the at least one bottom gate electrode, and at least one semiconductor channel layer may be formed on the at least one charge storage layer.

REFERENCES:
patent: 6285055 (2001-09-01), Gosain et al.
patent: 2001/0030324 (2001-10-01), Morikawa et al.
patent: 2006/0043377 (2006-03-01), Hoffman et al.

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