Inverted buried strap structure and method for vertical...

Details Inverted buried strap structure and method for vertical... Inverted buried strap structure and method for vertical...

2005-08-30

2005-08-30

Fourson, George (Department: 2823)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

C438S243000, C438S245000, C438S270000, C438S386000

Reexamination Certificate

active

06936511

ABSTRACT:
A simple method of forming the buried strap in a trench DRAM sets the separation between the buried strap and the vertical transistor channel by control of the overetch in forming a recess of the buried strap material, instead of setting the separation by the thickness of the trench top oxide.

REFERENCES:
patent: 6190971 (2001-02-01), Gruening et al.
patent: 6586300 (2003-07-01), Hummler et al.

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